Journal Report

Microelectronics International

Download PDF
Journal Information
Journal Title
Microelectronics International
Publisher
Emerald Publishing
ISSN
1356-5362
E-ISSN
1758-812X
Database
SCOPUS
Domain
Health Sciences, Physical Sciences, Social Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Reliability analysis of PBGA lead-free interconnect solder joints under drop impact load
Xuexia Yang, Yanxi Sun, Miao Zhu et al.
2026-11-10 Pages 1-13
DOI: 10.1108/mi-02-2026-0033
An advanced control strategy for matrix converters in unbalanced grid voltage conditions
Sarat Kumar Das, Jayakrushana Moharana, Prasid Syam
2026-11-3 Pages 1-16
DOI: 10.1108/mi-06-2026-0161
Bounded finite-step voltage control of dual-active-bridge converters with constrained triple-phase-shift modulation
Jun You, Bingxin Xu, Lei Li et al.
2026-10-29 Pages 1-13
DOI: 10.1108/mi-06-2026-0139
Editorial: Opinion: the next infrastructure waves behind AI data centers
Chong Leong Gan
2026-10-19 Vol. 43 Issue 4 Pages 213-213
DOI: 10.1108/mi-10-2026-310
A wide-input 7–40 V low-dropout regulator and bandgap-referenced precision output
Ching Chun Hsu, San-Fu Wang, Chi Chun Chen
2026-10-14 Pages 1-11
DOI: 10.1108/mi-03-2026-0053
A narrowband bandpass filter with multiple transmission zeros based on parallel coupled lines structure
Yanhao Liu, Yanxi Pan, Jing Feng et al.
2026-9-28 Pages 1-11
DOI: 10.1108/mi-05-2026-0135
Energy management control of grid-tied PV-battery system based on intelligent proportional allocation
Jinqi Du, Peng Ye, Hejiang Qian et al.
2026-9-21 Pages 1-14
DOI: 10.1108/mi-02-2026-0024
Room-temperature deposited Ti/Au films on Si toward wafer-level MEMS hermetic packaging
Xin Yang, Hao-Feng Chen, Junyuan Zhao et al.
2026-9-15 Vol. 43 Issue 4 Pages 236-245
DOI: 10.1108/mi-02-2026-0028
Statistical variability and performance trade-offs induced by 3D line edge roughness in 12-nm 3-stacked nanosheet FETs
Shekhar Yadav
2026-9-15 Pages 1-10
DOI: 10.1108/mi-06-2026-0144
Design of high-precision, low-power energy metering integrated circuits based on TDM architecture
Zuohan Zhang
2026-9-14 Pages 1-11
DOI: 10.1108/mi-07-2026-0181
Articles retrieved from Crossref.
Green Journals | https://www.green-journals.com | info@green-journals.com
Printed: November 9, 2026 12:25