Journal Report

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

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Journal Information
Journal Title
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Publisher
IEEE
ISSN
2168-6734
E-ISSN
2168-6734
Database
Clarivate
Domain
Life Sciences, Physical Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Impact of Back-Bias on Analog Performance at Cryogenic Temperature in 22-nm FDSOI MOSFETs for Quantum Computing Applications
Deepesh Sharma, Pulak Ghoshal, P. Srinivasan et al.
2026 Pages 1-1
DOI: 10.1109/jeds.2026.3705656
Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
Yanghao Wang, Hang Xu, Peng Liao et al.
2026 Vol. 14 Pages 70-78
DOI: 10.1109/jeds.2026.3653934
A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature
Chang-Hao Wang, Xin-Ru Chen, Jian-Bin Guo et al.
2026 Vol. 14 Pages 648-653
DOI: 10.1109/jeds.2025.3579146
Bridging Semiconductor Technology and Deep Learning Models: From Architectures to Domain-Specific Challenges
Man Luo, Yang Zhou, Wenbo Jiao et al.
2026 Vol. 14 Pages 525-536
DOI: 10.1109/jeds.2026.3717559
First Demonstration of the Positive Threshold Voltage Shift in InAlGaN/GaN HEMT by Adopting Hybrid Ferroelectric Charge Trap Gate Stack (FEG) With Tri-Gate Structure
Shu En Hsu, Rahul Rai, Phuong Anh Tran et al.
2026 Vol. 14 Pages 786-798
DOI: 10.1109/jeds.2026.3728467
On the In <sub>x</sub> Ga <sub>1-x</sub> As Channel Noise in InP HEMTs From 4 K to 300 K
Junjie Li, Justin H. Chen, Austin J. Minnich et al.
2026 Vol. 14 Pages 820-827
DOI: 10.1109/jeds.2026.3730543
Sb-Doped Substrates for Low-Noise Silicon Photomultipliers
Shifeng Zhang, Jiangteng Xia, Yanling Ren et al.
2026 Vol. 14 Pages 107-112
DOI: 10.1109/jeds.2026.3661177
Memcapacitor-Based Insect Feeding Behaviour Classification With Reservoir Computing
Lautaro N. Petrauskas, Anju Kumari R., Stefan C. B. Mannsfeld et al.
2026 Vol. 14 Pages 151-158
DOI: 10.1109/jeds.2026.3661727
Effect of Terbium Doping on ITZO Thin-Film Transistors for Improved Bias-Stress Stability
Jiajun Sun, Yayi Chen, Wenbo Zhao et al.
2026 Vol. 14 Pages 836-843
DOI: 10.1109/jeds.2026.3727439
2xVDD-Tolerant ESD Clamp With Dual Detection and Ultra-Low Leakage
Kuan-Ying Chen, Shih-Hsin Wu, Po-Xiao Chen et al.
2026 Vol. 14 Pages 205-212
DOI: 10.1109/jeds.2026.3674432
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Printed: October 25, 2026 21:11