Journal Report

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

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Journal Information
Journal Title
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Publisher
ELECTROCHEMICAL SOC INC
ISSN
2162-8769
E-ISSN
2162-8777
Database
Clarivate
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Defect-Engineered ZnO Nanostructures for Photocatalytic Water Purification
Rajababu Chintaparty
2026-11-2
DOI: 10.1149/2162-8777/aebcb5
On a P-type Ammonia Gas Sensor Prepared by a Copper Oxide Thin Film Functionalized with Platinum Nanoparticles
Yu Xiang Wang, Jui-Hung Lin, YI CHENG WANG et al.
2026-11-2
DOI: 10.1149/2162-8777/aebcb4
Improvement of AlGaN/GaN HEMT Performance by Using Hybrid Ohmic Source and Drain for Ka-band Applications
Neng-Da Li, Yueh-Chin Lin, Howie Tseng et al.
2026-10-28
DOI: 10.1149/2162-8777/aebabd
Editor’s Choice - Influence of ITO and AlN Capping on Magnesium Diffusion and Chemical Doping in GaN
Haley E Dishman, Sujitra Pookpanratana, Owen R Meilander et al.
2026-10-23
DOI: 10.1149/2162-8777/aeb8f5
Impact of Polarization Voltage on Sensitivity and Discharge Kinetics of Pulsed Polarized Pt|YSZ|Pt NOx-Sensors
Nils Donker, Jens Zosel, Ralf Moos et al.
2026-10-23
DOI: 10.1149/2162-8777/aeb869
Low-Damage Transfer of Nitride Heterostructures for Advanced Nitride-on-Diamond Devices
Ryo Kagawa, Hikaru Iwamoto, Tatsuru Shirafuji et al.
2026-10-21
DOI: 10.1149/2162-8777/aeb721
Gettering Effect of BMD Nuclei in Silicon Wafers Induced by Ultra-High-Temperature RTP
Hiroya Iwashiro, Hibiki Bekku, Eiji Kamiyama et al.
2026-10-16
DOI: 10.1149/2162-8777/aeb572
Interfacial Polarization in PS/Sm <sub>2</sub> O <sub>3</sub> Nanocomposite Films for Low-Loss Frequency-Dependent Dielectric Application
Melek Güner, Betül Çiçek Özkan, Ezgi Gürgenç et al.
2026-10-1 Vol. 15 Issue 10 Pages 103001
DOI: 10.1149/2162-8777/aeac85
Investigating the Effects of Growth Conditions of the Ultra-Thin InAlGaN Back Barrier on the Performance of the Sub-50 nm Channel Thickness InAlGaN DHEMTs
Hoang-Tan-Ngoc Nguyen, Rahul Rai, Duy-Hung Tran et al.
2026-10-1 Vol. 15 Issue 10 Pages 104006
DOI: 10.1149/2162-8777/aeb15e
Investigations on Sc <sub>0.16</sub> Al <sub>0.77</sub> Ga <sub>0.07</sub> N/AlN/GaN MOS-HFETs with Gate Field-Plate Design
Chien-Hung Ko, Ching-Sung Lee, Ching-Huan Peng et al.
2026-10-1 Vol. 15 Issue 10 Pages 104007
DOI: 10.1149/2162-8777/aeb571
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Printed: November 3, 2026 06:09