Journal Report

IEEE TRANSACTIONS ON NANOTECHNOLOGY

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Journal Information
Journal Title
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Publisher
IEEE
ISSN
1536-125X
E-ISSN
1941-0085
Database
Clarivate
Domain
Physical Sciences, Social Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Exploring the Vibrational Behavior of Two-Dimensional Graphyne Allotropes for Millimeter-Wave Sensing and Autonomous Devices
Nilüfer Ertekin, Wen Lei
2026 Vol. 25 Pages 74-81
DOI: 10.1109/tnano.2026.3667055
Electromagnetic Interference Shielding Effectiveness of α-In <sub>2</sub> Se <sub>3</sub>
Padam Ghimire, Owen Vail, Paul Haghi Ashtiani et al.
2026 Pages 1-10
DOI: 10.1109/tnano.2026.3715387
An Energy-Efficient RFET-Based Stochastic Computing Neural Network Accelerator
Sheng Lu, Qianhou Qu, Sungyong Jung et al.
2026 Vol. 25 Pages 330-341
DOI: 10.1109/tnano.2026.3728685
Bridging TCAD and AI: A Machine Learning Approach for BioTFET Behavior Prediction
Iman Chahardah Cherik, Subir Kumar Maity, Saeed Mohammadi
2026 Vol. 25 Pages 280-286
DOI: 10.1109/tnano.2026.3720723
Dielectric Properties of Functional Nanofluids Based on Ni, Cu, and Ag Nanoparticles Deposited in Liquid Polymers
Oleksandr Boiko, Kateryna Biliak, Alexander Vahl et al.
2026 Vol. 25 Pages 99-106
DOI: 10.1109/tnano.2026.3675650
Efficient Approximate Ternary Multipliers for Emerging Nanodevices
L. Hemanth Krishna, B. Srinivasu, K. Sridharan
2026 Vol. 25 Pages 1-12
DOI: 10.1109/tnano.2025.3648734
Development and Characteristics of Reprogrammable antifuse With FeedBack Field Effect Transistor
Hojin Shin, Woo Young Choi, Il Hwan Cho
2026 Pages 1-11
DOI: 10.1109/tnano.2026.3749326
Multi-Bandwidth Coupling Performance Enhancement Using Si <sub>3</sub> N <sub>4</sub> -on-SOI Grating Coupler Platform
Tarun Sharma, Balveer Painam, Xingyu Liu et al.
2026 Vol. 25 Pages 107-112
DOI: 10.1109/tnano.2026.3675855
Optimization of SCEs in Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Ferroelectric GAA-Nanotube NCFET for Ultra Low Power Computational Applications
Vivek Kumar, Kavicharan Mummaneni
2026 Pages 1-7
DOI: 10.1109/tnano.2026.3747936
Physics-Based Gate Current Model for p-GaN HEMTs At Cryogenic Temperatures
Mir Mohammad Shayoub, Mohammad Sajid Nazir, Shivendra Kumar Singh et al.
2026 Pages 1-6
DOI: 10.1109/tnano.2026.3745457
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Printed: November 3, 2026 17:26