Journal Report

Microelectronic Engineering

Download PDF
Journal Information
Journal Title
Microelectronic Engineering
Publisher
Elsevier B.V.
ISSN
0167-9317
E-ISSN
Database
SCOPUS
Domain
Physical Sciences, Social Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Electromigration reliability modeling: from full-physics to surrogate models for efficient uncertainty quantification
A.S. Saleh, H. Ceric, K. Croes et al.
2027-1 Vol. 308 Pages 112547
DOI: 10.1016/j.mee.2026.112547
Design of a memristive Chen chaotic system featuring hardware-friendly nonlinearity and its fully integrated circuit validation using SMIC 180 nm CMOS process
Zhikui Duan, Yuqi Wang, Jiacheng Li et al.
2027-1 Vol. 307 Pages 112486
DOI: 10.1016/j.mee.2026.112486
Editorial Board
2027-1 Vol. 307 Pages 112512
DOI: 10.1016/s0167-9317(26)00068-7
High-robustness and high-density VCMA-MRAM with energy-efficient BL-write scheme
Yaling Wang, Chao Wang, Jiaxin Li et al.
2027-1 Vol. 307 Pages 112498
DOI: 10.1016/j.mee.2026.112498
Logic and SRAM design co-optimization for A7 monolithic CFETs using backside gate contact-enabled hybrid power delivery
Hao He, Lijun Xu, Xiaoning Ma et al.
2027-1 Vol. 307 Pages 112501
DOI: 10.1016/j.mee.2026.112501
Enhancing SRAM design with a novel staggered-gate CFET: A path to area reduction and performance optimization
Xin Wang, Longyu Sun, Haoyan Liu et al.
2027-1 Vol. 308 Pages 112527
DOI: 10.1016/j.mee.2026.112527
Understanding the impact of vdW gap on the reliability of nanoscale MoS2 FETs by TCAD modeling
Yezhu Lv, Yehao Wu, Yury Yu. Illarionov
2027-1 Vol. 307 Pages 112499
DOI: 10.1016/j.mee.2026.112499
Cu-ion dynamics-regulated forming-free resistive switching in two-dimensional Ferroionic CuBiP2Se6
Yutao Li, Weili Zhen, Ce Li et al.
2027-1 Vol. 308 Pages 112508
DOI: 10.1016/j.mee.2026.112508
LWR-driven hot carrier degradation-induced variability in CMOS devices: mechanisms and mitigation
Yaoting Wang, Yongyu Wu, Hai Wang et al.
2027-1 Vol. 307 Pages 112489
DOI: 10.1016/j.mee.2026.112489
Ultra-low power electronics with steep sub-threshold swing devices, ferroelectric materials, and cryogenic operation
Darsen D. Lu, Hao-Yu Lu, Chia-Chi Hsieh et al.
2027-1 Vol. 308 Pages 112504
DOI: 10.1016/j.mee.2026.112504
Articles retrieved from Crossref.
Green Journals | https://www.green-journals.com | info@green-journals.com
Printed: November 9, 2026 12:57