Journal Report

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

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Journal Information
Journal Title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Publisher
ELSEVIER SCI LTD
ISSN
1369-8001
E-ISSN
1873-4081
Database
Clarivate
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Enhanced mobility and stability of IGZO/IGO TFTs via reducing interfacial and bulk defect densities by post-annealing of gate insulator
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Influence of AlN V/III ratio on epitaxial growth of (112‾2) AlGaN films
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2027-3 Vol. 219 Pages 111352
DOI: 10.1016/j.mssp.2026.111352
Beyond optical spectroscopy: Isotope effects in hydrogen-related defects revealed by electrical measurements
K. Gwozdz, Vl. Kolkovsky, J. Weber
2027-3 Vol. 219 Pages 111334
DOI: 10.1016/j.mssp.2026.111334
Mixed conduction mechanism of cobalt-doped strontium titanate and diffusion kinetics as the dense diffusion barrier of limiting current oxygen sensors
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DOI: 10.1016/j.mssp.2026.111328
Recent advances in BiOCl-based heterojunction photocatalysts: mechanisms and applications
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DOI: 10.1016/j.mssp.2026.111403
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DOI: 10.1016/j.mssp.2026.111353
Facile preparation of WO3-MoO3 composite for synergistic photo- and thermal degradation of organic dyes under LED light irradiation
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DOI: 10.1016/j.mssp.2026.111322
Growth and microstructural characterization of thick AlGaN/GaN heterostructures on commercial 4° off-axis n-type 4H-SiC substrates
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DOI: 10.1016/j.mssp.2026.111345
Preparation and property optimization of K0.5Na0.5NbO3-based piezoelectric single crystals via seed-free solid-state crystal growth and doping
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DOI: 10.1016/j.mssp.2026.111374
Temperature-dependent junction electrostatics and interfacial polarization in a Schottky structure with an rGO/PVA–CoFe2O4 composite interlayer
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DOI: 10.1016/j.mssp.2026.111344
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Printed: November 11, 2026 04:07