Journal Report

Russian Microelectronics

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Journal Information
Journal Title
Russian Microelectronics
Publisher
Pleiades Publishing
ISSN
1063-7397
E-ISSN
1608-3415
Database
SCOPUS
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓
2025 ✓
2024 ✓
2023 ✓
2021/2022 ✓
2020 ✓
2019 ✓
2018
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Design of High-Performance Low-Power Adder Circuits, 2 to 4 Decoder and 2 × 1 Mux Using RLG for VLSI Applications
Syed Zahiruddin, P. Subbarayudu, P. V. S. Murali Krishna et al.
2026-4 Vol. 55 Issue 2 Pages 369-375
DOI: 10.1134/s1063739726600056
Dephasing of a Charge Qubit in a Stochastic Field of Oscillating Electrons
N. V. Kulagin, A. V. Tsukanov
2026-4 Vol. 55 Issue 2 Pages 258-268
DOI: 10.1134/s1063739726600317
Optimization of Wireless Data Transmission in Three-Dimensional Integrated Circuits Using Nanophotonic Devices: Challenges and Solutions
D. A. Serov, I. A. Khorin
2026-4 Vol. 55 Issue 2 Pages 332-339
DOI: 10.1134/s1063739725602310
Electroplasticity of Metallic Nanowires for Ultrashort Current Loads
S. Sh. Rekhviashvili
2026-4 Vol. 55 Issue 2 Pages 252-257
DOI: 10.1134/s1063739726600287
DFT Modeling of Nitrogen Adsorption and Doping in A15-Type Intermetallic Ti3Sb
M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva et al.
2026-4 Vol. 55 Issue 2 Pages 239-251
DOI: 10.1134/s1063739726600603
Design and Optimization of CMOS Two-Stage Operational Amplifier Using Hippopotamus Optimization Algorithm
Suvashish Kund, Bishnu Prasad De, Sandeep Kumar Dash et al.
2026-4 Vol. 55 Issue 2 Pages 396-404
DOI: 10.1134/s1063739725601092
Compact Model for Uniaxial Strain-Induced Threshold Voltage Shift in High-k/Metal Gate Nanoscale Bulk MOSFETs
Yashu Swami
2026-4 Vol. 55 Issue 2 Pages 376-385
DOI: 10.1134/s1063739726600044
Estimating the Stochastic Reliability of a KP961 Power Transistor under Thermal Cycling Using the Monte Carlo Simulation
T. I. Isabekova, A. R. Shakhmaeva
2026-4 Vol. 55 Issue 2 Pages 289-303
DOI: 10.1134/s1063739726600305
Modeling the Temperature Dependence of Photoconductivity of Sensitized Indium Phosphide with a Deep Copper Impurity
Ph. V. Makarenko, K. V. Zol’nikov, A. V. Achkasov et al.
2026-4 Vol. 55 Issue 2 Pages 269-279
DOI: 10.1134/s1063739726600354
FinFET-Based SRAM Cell Using Low-Power Technique for Leakage and Stability Optimization
Ekta Jolly, Vijay Kumar Sharma, Anil Kumar Bhardwaj
2026-4 Vol. 55 Issue 2 Pages 386-395
DOI: 10.1134/s1063739725602334
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Printed: November 12, 2026 07:16