Journal Report

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

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Journal Information
Journal Title
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Publisher
IEEE
ISSN
1530-4388
E-ISSN
1558-2574
Database
Clarivate
Domain
Physical Sciences, Social Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Electrical Behavior at Cryogenic Temperature of the Radiation-Tolerant Hourglass MOS Transistor
Carlos Alfredo Pelcastre Ortega, Mónico Linares Aranda, Daniel Ferrusca Rodríguez et al.
2026-9 Vol. 26 Issue 3 Pages 807-814
DOI: 10.1109/tdmr.2026.3701856
Influence of Gate Insulator Modulation on the Electrical and Material Properties of Dual-Gate InGaZnO Thin-Film Transistors
Ya-Ting Chien, Yu-An Chen, Bo-Shen Huang et al.
2026-9 Vol. 26 Issue 3 Pages 880-887
DOI: 10.1109/tdmr.2026.3712375
Field- and Temperature-Induced Drift in Multi-Level Al-Doped HfO <sub>2</sub> RRAM
Andrea Baroni, Jianan Wen, Eduardo Pérez et al.
2026-9 Vol. 26 Issue 3 Pages 871-879
DOI: 10.1109/tdmr.2026.3700862
Investigation of AlSb Monolayer and Its Application in Single-Electron Transistor for Low-Power Switching and Toxic Gas Sensing
Prity Sinha, Pramod Kumar Tiwari
2026-9 Vol. 26 Issue 3 Pages 942-951
DOI: 10.1109/tdmr.2026.3706183
Modeling and Evaluation of Single Event Effects on Hafnia-Based FeRAM
Stuart E. Wodzro, Shimeng Yu
2026-9 Vol. 26 Issue 3 Pages 849-857
DOI: 10.1109/tdmr.2026.3696237
Reliability-Assisted Electro-Physical Modeling of Radiation-Induced Resistance Fluctuation in Nanosheet FET
Khushi Jain, Sandeep Kumar, Sunil Rathore et al.
2026-9 Vol. 26 Issue 3 Pages 832-838
DOI: 10.1109/tdmr.2026.3713056
3D NAND Scaling Performance Enhancement Using 2D MoS <sub>2</sub> Channel
Mohd Ashraf Lone, Dibyadrasta Sahoo, Sanjeev Kumar Manhas
2026-9 Vol. 26 Issue 3 Pages 815-821
DOI: 10.1109/tdmr.2026.3697549
Reliability-Aware Structural and Spacer Optimization of E-Shaped CombFET for Advanced CMOS Nodes
B. Pavithara, P. Prithvi
2026-9 Vol. 26 Issue 3 Pages 897-905
DOI: 10.1109/tdmr.2026.3713133
Influence of Epitaxial Layer Thickness on the Holding Voltage Scalability of Bi-Directional SCR Devices
Ting Yang, Jie Zeng, Qidong Xie et al.
2026-9 Vol. 26 Issue 3 Pages 794-799
DOI: 10.1109/tdmr.2026.3698068
PVTVAD: PVT-Variation-Aware Fault Diagnosis in ReRAM-Based CAM Arrays
Haneen G. Hezayyin, Mahta Mayahinia, Mehdi Tahoori
2026-9 Vol. 26 Issue 3 Pages 733-742
DOI: 10.1109/tdmr.2026.3732979
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Printed: November 4, 2026 13:47