Journal Report

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS

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Journal Information
Journal Title
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
Publisher
AMER SCIENTIFIC PUBLISHERS
ISSN
1555-130X
E-ISSN
1555-1318
Database
Clarivate
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓
2025 ✓
2024 ✓
2023 ✓
2021/2022 ✓
2020 ✓
2019 ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Gas Sensing Property of ZnO Based Nanomaterials and Its Application in Vehicle Air Monitoring
Fan Hailong
2026-5-1 Vol. 21 Issue 05 Pages 485
DOI: 10.1166/jno.2026.3899
Energy-Efficient Nanoscale CMOS RF Receiver Front-End with Multi-Objective Optimization for 2.4 GHz ISM Band Applications
N. Revathi
2026-5-1 Vol. 21 Issue 05 Pages 494
DOI: 10.1166/jno.2026.3900
Intelligent Closed-Loop Control of MEMS-Reconfigurable Plasmonic Metamaterial Absorbers Using Deep Reinforcement Learning for Mid-Infrared Adaptive Photonics
Ligeer Qi
2026-5-1 Vol. 21 Issue 05 Pages 472
DOI: 10.1166/jno.2026.3898
Co3O4 Nanostructures as High-Power Electrode Materials for Supercapacitors in Nearshore Infrastructure Monitoring Applications
Shijun Huang
2026-5-1 Vol. 21 Issue 05 Pages 433
DOI: 10.1166/jno.2026.3894
Assembled Different Morphologys of NiS Anchored NH4F and HNO3 Etched Carbon Clothes for Supercapacitors
Xiaochen Sun
2026-5-1 Vol. 21 Issue 05 Pages 464
DOI: 10.1166/jno.2026.3897
Light Intensity Compensation of Quantum Spin Hall Effect Current Sensor Based on the Fabry-Perot Effect
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DOI: 10.1166/jno.2026.3902
Intelligent Complementary Metal-Oxide-Semiconductor (CMOS) Biosensor-Assisted Framework for High-Accuracy Ovarian Cancer Diagnosis
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2026-5-1 Vol. 21 Issue 05 Pages 454
DOI: 10.1166/jno.2026.3895
Structural and Electrical Characterization of GaN HEMTs Fabricated on Polycrystalline Diamond Composite Substrates: A Comparative Study
Shoudao Wang
2026-5-1 Vol. 21 Issue 05 Pages 425
DOI: 10.1166/jno.2026.3901
Distribution Circuit Breaker Fault Arc Real-Time Detection Computing Engine Based on Sb2O3 Molecular Crystal Memristor Array
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2026-5-1 Vol. 21 Issue 05 Pages 441
DOI: 10.1166/jno.2026.3896
Comparative Study of SnSe2/WSe2 Junction Field-Effect Transistor and SnSe2/WSe2/SnSe2 Gate-All-Around Junction Field-Effect Transistor
Changlim Woo
2026-4-1 Vol. 21 Issue 04 Pages 321
DOI: 10.1166/jno.2026.3891
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Printed: November 1, 2026 02:06