Journal Report

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

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Journal Information
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher
IOP PUBLISHING LTD
ISSN
0268-1242
E-ISSN
1361-6641
Database
Clarivate
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth
Yipei Lei, Xinhua Wang, Fengwen Mu et al.
2026-11-2
DOI: 10.1088/1361-6641/aebca9
Two-wavelength micro-Raman spectroscopy and atomistic modeling of n-InSb:Te single crystals: orientation dependence of phonon scattering and the influence of carrier concentration
Aleksandr Maksimov, Yuri Tarasov, Nikita Sanzharovskii et al.
2026-10-29
DOI: 10.1088/1361-6641/aebb5d
Novel Projected-Pitch Technology and Non-Planar Surface LDMOS with Ultra-Low Specific On-Resistance
Hanwen Bai, Dingxiang Ma, Jiawei Wang et al.
2026-10-29
DOI: 10.1088/1361-6641/aebb5e
Effect of Intrinsic Layer Thickness on the Power Conversion Efficiency of GaN p-i-n Betavoltaic Cells
Huiyun Jung, Jae-Won Park, Dong-Seok Kim et al.
2026-10-27
DOI: 10.1088/1361-6641/aeba0f
Design Optimization of Strain Distribution and Polarization-Induced 2DEG Formation in III-Nitride/GaN Heterostructures
Priyesh Kumar, Nirjara Anubhav Mehta, Jhuma Saha
2026-10-27
DOI: 10.1088/1361-6641/aeba0d
Low-Loss Superjunction SiC MOSFET with Improved Breakdown Voltage and Reverse-Recovery Performance
Xiangqi Hong, Xun Li
2026-10-27
DOI: 10.1088/1361-6641/aeba0c
Negative-Capacitance Germanium-on-AlAs Nanosheet FETs for Ultra-Low-Power Logic Applications
Anshu Pathak, Shawn Lewis, Chaitrali Samant et al.
2026-10-26
DOI: 10.1088/1361-6641/aeb96f
A High-Performance Depletion Mode Graded AlGaN/GaN HEMT with Trilayer Cap and AlInGaN Back Barrier for Analog and RF Applications
Amit Agarwal, Sumit Kale
2026-10-26
DOI: 10.1088/1361-6641/aeb970
Electrothermal Parameter Identification from DC I-V Data for Compact Drain-Current Models of Gan-On-SiC RF HEMTS: A Comparative Metaheuristic Study
Syed Mostafa Shihab Uddin, Famin Rahman Rakib, Anwar Jarndal et al.
2026-10-26
DOI: 10.1088/1361-6641/aeb96e
From Growth to Integration: MOCVD epitaxy of h-BN and Heterogeneous Integration
Yanchao Wang, Jingnan Dong, Yiwei Duo et al.
2026-10-23
DOI: 10.1088/1361-6641/aeb8b5
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Printed: November 4, 2026 12:06