Journal Report

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

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Journal Information
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher
IOP PUBLISHING LTD
ISSN
0268-1242
E-ISSN
1361-6641
Database
Clarivate
Domain
Physical Sciences
Classification History
Year A+ A B C
2026 ✓ ✓
2025 ✓ ✓
2024 ✓ ✓
2023 ✓ ✓
2021/2022 ✓ ✓
2020 ✓ ✓
2019 ✓ ✓
2018 ✓
A journal may have more than one classification in the same year. All recorded classifications are displayed.
Recent Articles
Physical Origin and Mitigation of Output-Capacitance Hysteresis in Superjunction Devices
Nazareno Donato
2026-11-6
DOI: 10.1088/1361-6641/aebef5
Physics-Based Gate Stack Optimisation of p-GaN/AlGaN/GaN HEMTs for Balanced Threshold Voltage and On-Resistance
Nadim Ahmed, Chinmoy Ghorai
2026-11-6
DOI: 10.1088/1361-6641/aebef3
Threshold voltage engineering via diode-embedded p-GaN gate HEMTs
Jun-Hyeok Yim, Myeongsu Chae, Min-Ji Cho et al.
2026-11-6
DOI: 10.1088/1361-6641/aebef4
High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth
Yipei Lei, Xinhua Wang, Fengwen Mu et al.
2026-11-2
DOI: 10.1088/1361-6641/aebca9
Negative-capacitance germanium-on-AlAs nanosheet FETs for ultra-low-power logic applications
Anshu Pathak, Shawn Lewis, Chaitrali Samant et al.
2026-11-1 Vol. 41 Issue 11 Pages 115005
DOI: 10.1088/1361-6641/aeb96f
Design optimization of strain distribution and polarization-induced 2DEG formation in III-Nitride/GaN heterostructures
Priyesh Kumar, Nirjara Mehta, Jhuma Saha
2026-11-1 Vol. 41 Issue 11 Pages 115004
DOI: 10.1088/1361-6641/aeba0d
Low-loss superjunction SiC MOSFET with improved breakdown voltage and reverse-recovery performance
Xiangqi Hong, Xun Li
2026-11-1 Vol. 41 Issue 11 Pages 115001
DOI: 10.1088/1361-6641/aeba0c
From growth to integration: MOCVD epitaxy of h-BN and heterogeneous integration
Yanchao Wang, Yiwei Duo, Jingnan Dong et al.
2026-11-1 Vol. 41 Issue 11 Pages 113001
DOI: 10.1088/1361-6641/aeb8b5
Investigation on thermal stability of Epi-GeSn directly on Si (001)
Tharundev V V, Dushyant Singh, Vigneshswari S R et al.
2026-11-1 Vol. 41 Issue 11 Pages 115003
DOI: 10.1088/1361-6641/aeba0e
CORRIGENDUM: High-performance panchromatic organic photodetectors realized through ZnO modification for semi-transparent metal copper anode (2026 <i>Semicond. Sci. Technol.</i>  41 055022)
Ji Li, Dechao Guo, Chunhui Duan et al.
2026-11-1 Vol. 41 Issue 11 Pages 119501
DOI: 10.1088/1361-6641/aeb688
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Printed: November 7, 2026 18:54